Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”

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ERRATUM | Updated：2022-11-16

- Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”
- Chinese Journal of Polymer Science Vol. 40, Issue 12, Pages: 1706(2022)
- Affiliations：
  
  a.State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China
  b.School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
  c.Department of Materials Science, Fudan University, Shanghai 200433, China
  d.Key Laboratory of Rubber-Plastics, Ministry of Education/Shandong Provincial Key Laboratory of Rubber-plastics, Qingdao University of Science & Technology, Qingdao 266042, China
- Author bio：
  
  skyan@mail.buct.edu.cn (S.K.Y.)
  xueyun@bit.edu.cn (X.Y.W.)
  xiaolisun@mail.buct.edu.cn (X.L.S.)
- Funds：
- DOI：10.1007/s10118-022-2882-2
  CLC：
Scan for full text
Xiao Chu, Jia-Qian Kang, Ya Hong, et al. Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”. [J]. Chinese Journal of Polymer Science 40(12):1706(2022)
DOI：

Xiao Chu, Jia-Qian Kang, Ya Hong, et al. Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”. [J]. Chinese Journal of Polymer Science 40(12):1706(2022) DOI： 10.1007/s10118-022-2882-2.

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