Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”
ERRATUM|Updated:2022-11-16
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Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”
Chinese Journal of Polymer ScienceVol. 40, Issue 12, Pages: 1706(2022)
Affiliations:
a.State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China
b.School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
c.Department of Materials Science, Fudan University, Shanghai 200433, China
d.Key Laboratory of Rubber-Plastics, Ministry of Education/Shandong Provincial Key Laboratory of Rubber-plastics, Qingdao University of Science & Technology, Qingdao 266042, China
Chu, X.; Kang, J. Q.; Hong, Y.; Zhu, G. D.; Yan, S. K.; Wang, X. Y.; Sun, X. L. Erratum to “The effect of substrate on the properties of non-volatile ferroelectric P(VDF-TrFE)/P3HT memory devices”. Chinese J. Polym. Sci. 2022, 40, 1706
Xiao Chu, Jia-Qian Kang, Ya Hong, et al. Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”[J]. Chinese Journal of Polymer Science, 2022, 40(12): 1706.
Chu, X.; Kang, J. Q.; Hong, Y.; Zhu, G. D.; Yan, S. K.; Wang, X. Y.; Sun, X. L. Erratum to “The effect of substrate on the properties of non-volatile ferroelectric P(VDF-TrFE)/P3HT memory devices”. Chinese J. Polym. Sci. 2022, 40, 1706DOI: 10.1007/s10118-022-2882-2.
Xiao Chu, Jia-Qian Kang, Ya Hong, et al. Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”[J]. Chinese Journal of Polymer Science, 2022, 40(12): 1706.DOI: 10.1007/s10118-022-2882-2.
Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”
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