Infrared Photodetectors and Image Arrays Made with Organic Semiconductors

Zhi-Ming Zhong; Feng Peng; Lei Ying; Zhen-Qiang Huang; Wen-Kai Zhong; Gang Yu; Yong Cao; Fei Huang

doi:10.1007/s10118-023-2973-8

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Infrared Photodetectors and Image Arrays Made with Organic Semiconductors

RESEARCH ARTICLE | Updated：2023-09-21

- Infrared Photodetectors and Image Arrays Made with Organic Semiconductors
  Enhanced Publication
- Chinese Journal of Polymer Science Vol. 41, Issue 10, Pages: 1629-1637(2023)
- Affiliations：
  
  1.Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
- Author bio：
  
  msleiying@scut.edu.cn (L.Y.)
  gangyu@scut.edu.cn (G.Y.)
  msfhuang@scut.edu.cn (F.H.)
- Funds：
- DOI：10.1007/s10118-023-2973-8
  CLC：
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Zhi-Ming Zhong, Feng Peng, Lei Ying, et al. Infrared Photodetectors and Image Arrays Made with Organic Semiconductors. [J]. Chinese Journal of Polymer Science 41(10):1629-1637(2023)
DOI：

Zhi-Ming Zhong, Feng Peng, Lei Ying, et al. Infrared Photodetectors and Image Arrays Made with Organic Semiconductors. [J]. Chinese Journal of Polymer Science 41(10):1629-1637(2023) DOI： 10.1007/s10118-023-2973-8.

摘要

Thin film photodiode based on narrow-bandgap polymer PPCPD achieved high detectivity and quantum efficiency and realized high pixel-density image arrays without pixel-level-patterning. Short-wavelength infrared imaging could be scanned and read out by a 1 × 256 linear array with 25 μm × 25 μm pixel pitch.

Abstract

Combining the strategies of introducing larger heteroatom, regio-regular backbone and extended branching position of side-chain, we developed polymer semiconductors (,PPCPD,) with narrow band-gap to construct the photosensing layer of thin-film photodiodes and image arrays. The spectral response of the resulting organic photodiodes spans from the near ultra-violet to short-wavelength infrared region. The performance of these short-wavelength infrared photodiodes in 900–1200 nm range achieved a level competitive with that of indium gallium arsenide-based inorganic crystalline detectors, exhibiting a specific detectivity of 5.55×10,12, Jones at 1.15 μm. High photodetectivity and quantum efficiency in photodiode with amorphous/nanocrystalline thin-films of 100−200 nm thickness enabled high pixel-density image arrays without pixel-level-patterning in the sensing layer. 1 × 256 linear diode arrays with 25 μm × 25 μm pixel pitch were achieved, enabling high pixel-density short-wavelength infrared imaging at room temperature.

关键词

Keywords

Conjugated polymerOrganic semiconductorInfraredPhotodetectorImage array

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