The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices

Xiao Chu; Jia-Qian Kang; Ya Hong; Guo-Dong Zhu; Shou-Ke Yan; Xue-Yun Wang; Xiao-Li Sun

doi:10.1007/s10118-022-2733-1

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The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices

RESEARCH ARTICLE | Updated：2022-05-24

- The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices
- Chinese Journal of Polymer Science Vol. 40, Issue 6, Pages: 692-699(2022)
- Affiliations：
  
  a.State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China
  b.School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
  c.Department of Materials Science, Fudan University, Shanghai 200433, China
  d.Key Laboratory of Rubber-Plastics, Ministry of Education/Shandong Provincial Key Laboratory of Rubber-plastics, Qingdao University of Science & Technology, Qingdao 266042, China
- Author bio：
  
  skyan@mail.buct.edu.cn (S.K.Y.)
  xueyun@bit.edu.cn (X.Y.W.)
  xiaolisun@mail.buct.edu.cn (X.L.S.)
- Funds：
- DOI：10.1007/s10118-022-2733-1
  CLC：
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Xiao Chu, Jia-Qian Kang, Ya Hong, et al. The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices. [J]. Chinese Journal of Polymer Science 40(6):692-699(2022)
DOI：

Xiao Chu, Jia-Qian Kang, Ya Hong, et al. The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices. [J]. Chinese Journal of Polymer Science 40(6):692-699(2022) DOI： 10.1007/s10118-022-2733-1.

摘要

By employing sandwich structure constructed by silver electrode and P3HT/P(VDF-TrFE) blend film on graphene substrate, high performance ferroelectric memory devices have been obtained, which exhibit a great electrical switching behavior with high ON/ OFF ratio of about 1000 and low coercive voltage of approximately 5 V.

Abstract

Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/semiconducting poly(3-hexyl thiophene) (P3HT) blend systems have drawn great attention with their potential use for electronic applications, particularly non-volatile memory devices. It is essential to grasp a full understanding of the crystallization habits of the two polymers on different substrates for purposeful control of the structures of the blend and therefore the properties of the devices. Here, the effects of structure and morphology of the blend films generated at different substrate surfaces on the ferroelectric and switching properties of related devices are reported. It is identified that P(VDF-TrFE)/P3HT blend films prepared on graphene substrate show not only an obvious optimization in the ferroelectric behavior of P(VDF-TrFE), but also an enhancement of the charge transport within P3HT domains. By employing sandwich structure constructed by silver electrode and P3HT/P(VDF-TrFE) blend film on graphene substrate, high-performance ferroelectric memory devices have been obtained, which exhibit a great electrical switching behavior with high ON/OFF ratio of about 1000 and low coercive voltage of approximately 5 V. These findings provide useful guidance for fabricating high-performance ferroelectric memory devices.

关键词

Keywords

P(VDF-TrFE)P3HTGrapheneMemory devicesFerroelectric properties

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