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Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”
ERRATUM | Updated:2022-11-16
    • Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”

    • Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”

    • 高分子科学(英文版)   2022年40卷第12期 页码:1706
    • DOI:10.1007/s10118-022-2882-2    

      中图分类号:
    • 纸质出版:2022-12-01

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  • Chu, X.; Kang, J. Q.; Hong, Y.; Zhu, G. D.; Yan, S. K.; Wang, X. Y.; Sun, X. L. Erratum to “The effect of substrate on the properties of non-volatile ferroelectric P(VDF-TrFE)/P3HT memory devices”. Chinese J. Polym. Sci. 2022, 40, 1706 DOI: 10.1007/s10118-022-2882-2.

    Xiao Chu, Jia-Qian Kang, Ya Hong, et al. Erratum to “The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices”[J]. Chinese Journal of Polymer Science, 2022, 40(12): 1706. DOI: 10.1007/s10118-022-2882-2.

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