a.Department of Applied Chemistry, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, Xi'an 710049, China
b.College of Material Science and Engineering, Xi'an University of Science and Technology, Xi'an 710054, China
c.School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
Yun-chuan Xie (解云川), E-mail: ycxie@mail.xjtu.edu.cn
Zhi-cheng Zhang (张志成), E-mail: zhichengzhang@mail.xjtu.edu.cn
收稿:2015-11-27,
修回:2016-1-4,
录用:2016-1-4,
纸质出版:2016-05
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Wang Jian, Zhong Li, Yuan Yan, 等. Improving Ferro-and Piezo-Electric Properties of Hydrogenized Poly(vinylidene fluoride-trifluoroethylene) Films by Annealing at Elevated Temperatures[J]. Chinese Journal of Polymer Science, 2016,34(5):649-658.
Wang Jian, Zhong Li, Yuan Yan, et al. Improving Ferro-and Piezo-Electric Properties of Hydrogenized Poly(vinylidene fluoride-trifluoroethylene) Films by Annealing at Elevated Temperatures[J]. Chinese Journal of Polymer Science, 2016, 34(5): 649-658.
Wang Jian, Zhong Li, Yuan Yan, 等. Improving Ferro-and Piezo-Electric Properties of Hydrogenized Poly(vinylidene fluoride-trifluoroethylene) Films by Annealing at Elevated Temperatures[J]. Chinese Journal of Polymer Science, 2016,34(5):649-658. DOI: 10.1007/s10118-016-1782-8.
Wang Jian, Zhong Li, Yuan Yan, et al. Improving Ferro-and Piezo-Electric Properties of Hydrogenized Poly(vinylidene fluoride-trifluoroethylene) Films by Annealing at Elevated Temperatures[J]. Chinese Journal of Polymer Science, 2016, 34(5): 649-658. DOI: 10.1007/s10118-016-1782-8.
After annealing the solution cast P(VDF-TrFE) films at elevated temperatures
which were synthesized
via
a full hydrogenation process from P(VDF-CTFE) with a composition of VDF/TrFE=80/20 (mol%)
a series of P(VDF-TrFE) films were fabricated in present work. The crystalline and ferroelectric phases of the films were carefully characterized and their dielectric
ferroelectric and piezoelectric properties were systematically investigated. The improved crystalline and ferroelectric phases in the films induced by annealing at elevated temperatures are responsible for the significant improved electric properties of the films. The optimized annealing temperature is found to be 130 ℃ and the best performance including the highest dielectric constant of 12.5 at 1 kHz
the largest maximum polarization of 11.21 μC/cm
2
and remnant polarization of 7.22 μC/cm
2
the lowest coercive electric field of 56 MV/m
and the highest piezoelectric coefficient of-25 pC/N is observed.
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