Thiazoloisoindigo-based Polymer Semiconductors: Synthesis, Structure-Property Relationship, Charge Carrier Polarity, and Field-Effect Transistor Performance

Bo-Wen Li; Miao Xiong; Mei-Hua Liu; Zhi-Gao Li; Long Sang; Zi-Han Xiong; Biao Xiao; Jian Pei; Xiao-Bo Wan

doi:10.1007/s10118-023-3043-y

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Thiazoloisoindigo-based Polymer Semiconductors: Synthesis, Structure-Property Relationship, Charge Carrier Polarity, and Field-Effect Transistor Performance

RESEARCH ARTICLE | Updated：2023-12-26

- Thiazoloisoindigo-based Polymer Semiconductors: Synthesis, Structure-Property Relationship, Charge Carrier Polarity, and Field-Effect Transistor Performance
- Thiazoloisoindigo-based Polymer Semiconductors: Synthesis, Structure-Property Relationship, Charge Carrier Polarity, and Field-Effect Transistor Performance
- 高分子科学（英文版） 2024年42卷第1期页码：24-31
- Affiliations：
  
  a.Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, School of Optoelectronic Materials & Technology, Jianghan University, Wuhan 430056, China
  b.Beijing National Laboratory for Molecular Sciences, the Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Author bio：
  
  libw@jhun.edu.cn (B.W.L.)
  wanxb@jhun.edu.cn (X.B.W.)
- Funds：
  
  This work was supported by the National Natural Science Foundation of China (Nos. 22102086 and 22075105) and the start-up funding from Jianghan University.;Electronic supplementary information (ESI) is available free of charge in the online version of this article at http://doi.org/10.1007/s10118-023-3043-y.
- DOI：10.1007/s10118-023-3043-y
  中图分类号：
- 收稿：2023-06-24，
  
  修回：2023-7-23，
  
  录用：2023-8-16，
  
  网络首发：2023-09-20，
  
  纸质出版：2024-01-01
- Accepted：
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Li, B. W.; Xiong, M.; Liu, M. H.; Li, Z. G.; Sang, L.; Xiong, Z. H.; Xiao, B.; Pei, J.; Wan, X. B. Thiazoloisoindigo-based polymer semiconductors: synthesis, structure-property relationship, charge carrier polarity, and field-effect transistor performance. Chinese J. Polym. Sci. 2024, 42, 24–31

Bo-Wen Li, Miao Xiong, Mei-Hua Liu, et al. Thiazoloisoindigo-based Polymer Semiconductors: Synthesis, Structure-Property Relationship, Charge Carrier Polarity, and Field-Effect Transistor Performance[J]. Chinese Journal of Polymer Science, 2024, 42(1): 24-31.
Li, B. W.; Xiong, M.; Liu, M. H.; Li, Z. G.; Sang, L.; Xiong, Z. H.; Xiao, B.; Pei, J.; Wan, X. B. Thiazoloisoindigo-based polymer semiconductors: synthesis, structure-property relationship, charge carrier polarity, and field-effect transistor performance. Chinese J. Polym. Sci. 2024, 42, 24–31 DOI： 10.1007/s10118-023-3043-y.

Bo-Wen Li, Miao Xiong, Mei-Hua Liu, et al. Thiazoloisoindigo-based Polymer Semiconductors: Synthesis, Structure-Property Relationship, Charge Carrier Polarity, and Field-Effect Transistor Performance[J]. Chinese Journal of Polymer Science, 2024, 42(1): 24-31. DOI： 10.1007/s10118-023-3043-y.

摘要

Two new polymers based on based on thiophene-flanked thiazoloisoindigo (Th-TzII) were synthesized by simply copolymerizing it with bisthiophene and bisthiazole

and the charge carrier polarity can be adjusted between unipolar hole transport and bipolar transport

which provides an effective molecular design strategy for further optimization of polymer OFET performance.

Abstract

Developing new polymeric semiconductors with excellent device performance is essential for organic electronics. Herein

we synthesized two new thiazoloisoindigo (TzII)-based polymers

namely

P(TzII-dTh-dTh) and P(TzII-dTh-dTz)

by copolymerizing thiophene-flanked TzII with bithiophene and bithiazole

respectively. Owing to the more electron-deficient nature of bithiazole than bithiophene

P(TzII-dTh-dTz) possesses deeper LUMO/HOMO levels of −3.45/−5.47 eV than P(TzII-dTh-dTh) (−3.34/−5.32 eV). The organic field-effect transistor (OFET) devices based on P(TzII-dTh-dTh) exhibited p-type behaviors with an average hole mobility value as high as 1.43 cm

·V

−1

·s

−1

while P(TzII-dTh-dTz) showed typical ambipolar characteristics with average hole and electron mobilities of 0.38 and 0.56 cm

·V

−1

·s

−1

. In addition

we compared the performances of both polymers with other TzII-based polymers reported in our previous work

and showed that the charge carrier polarity can be manipulated by adjusting the number of the thiophene units between the acceptor unit. As the increase of the number of thiophene rings

charge carrier polarity shifts from electron-dominated ambipolar transport to hole-dominated ambipolar transport and then to unipolar hole transport in OFETs

which provides an effective molecular design strategy for further optimization of polymer OFET performance.

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