FOLLOWUS
Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, China
hhuo@bnu.edu.cn
Published:1 June 2024,
Published Online:15 April 2024,
Received:18 January 2024,
Revised:22 February 2024,
Accepted:1 March 2024
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Shan, H. T.; He, J. X.; Zhu, B. Y.; Cao, X. T.; Yan, Y. Y.; Zhou, J. J.; Huo, H. Surface-induced microstructure and performance changes in P3HT ultrathin films. Chinese J. Polym. Sci. 2024, 42, 805–814
Hong-Tao Shan, Jia-Xin He, Bing-Yan Zhu, et al. Surface-induced Microstructure and Performance Changes in P3HT Ultrathin Films. [J]. Chinese Journal of Polymer Science 42(6):805-814(2024)
Shan, H. T.; He, J. X.; Zhu, B. Y.; Cao, X. T.; Yan, Y. Y.; Zhou, J. J.; Huo, H. Surface-induced microstructure and performance changes in P3HT ultrathin films. Chinese J. Polym. Sci. 2024, 42, 805–814 DOI: 10.1007/s10118-024-3117-5.
Hong-Tao Shan, Jia-Xin He, Bing-Yan Zhu, et al. Surface-induced Microstructure and Performance Changes in P3HT Ultrathin Films. [J]. Chinese Journal of Polymer Science 42(6):805-814(2024) DOI: 10.1007/s10118-024-3117-5.
The conductivity of the P3HT ultrathin films prepared on glass
Si wafers and ITO substrates was similar
yet the stretchability of P3HT ultrathin films on ITO substrate is better than that on the other two. The polar component of surface energy plays a critical role on the crystalline and morphology of P3HT ultrathin film
further determining its electronic and mechanical performances.
In this work
poly(3-hexylthiophene) (P3HT) ultrathin films (P3HT-T) were prepared by spin-coating a dilute P3HT solution (in a toluene:
o
-dichlorobenzene (Tol:ODCB) blend with a volume ratio of 80:20) with ultrason
ication and the addition of the nucleating agent bicycle [2.2.1
]
heptane-2
3-dicarboxylic acid disodium salt (HPN-68L) on glass
Si wafers and indium tin oxide (ITO) substrates. The electrical and mechanical properties of the P3HT-T ultrathin films were investigated
and it was found that the conductivity and crack onset strain (COS) were simultaneously improved in comparison with those of the corresponding pristine P3HT film (P3HT-0
without ultrasonication and nucleating agent) on the same substrate
regardless of what substrate was used. Moreover
the conductivity of P3HT-T ultrathin films on different substrates was similar (varying from 3.7 S·cm
−1
to 4.4 S·cm
−1
)
yet the COS increased from 97% to 138% by varying the substrate from a Si wafer to ITO. Combining grazing-incidence wide-angle X-ray diffraction (GIXRD)
UV-visible (UV-Vis) spectroscopy and atomic force microscopy (AFM)
we found that the solid order and crystallinity of the P3HT-T ultrathin film on the Si wafer are highest
followed by those on glass
and much lower on ITO. Finally
the surface energy and roughness of three substrates were investigated
and it was found that the polar component of the surface energy
γ
p
plays a critical role in determining the crystalline microstructures of P3HT ultrathin films on different substrates. Our work indicates that the P3HT ultrathin film can obviously improve the stretchability and simultaneously retain similar electrical performance when a suitable substrate is chosen. These findings offer a new direction for research on stretchable CP ultrathin films to facilitate future practical applications.
P3HT ultrathin filmSubstrateCrystalline microstructuresPolar component of the surface energyElectrical and stretchable performances
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