Poly(3-hexylthio) thiophene Field-effect Transistor Device Performance: Impact of the Content of Hexylthio Side Chain on Backbone

Hao-Yu Liu; Lian-He Han; Ling-Wei Kong; Li-Ping Zhu; Xiao-Lan Qiao; Mei-Fang Zhu

doi:10.1007/s10118-023-3042-z

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Poly(3-hexylthio) thiophene Field-effect Transistor Device Performance: Impact of the Content of Hexylthio Side Chain on Backbone

RESEARCH ARTICLE | Updated：2023-12-26

- Poly(3-hexylthio) thiophene Field-effect Transistor Device Performance: Impact of the Content of Hexylthio Side Chain on Backbone
- Chinese Journal of Polymer Science Vol. 42, Issue 1, Pages: 14-23(2024)
- Affiliations：
  
  a.State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
  b.School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- Author bio：
  
  xlqiao@dhu.edu.cn (X.L.Q.)
  zmf@dhu.edu.cn (M.F.Z.)
- Funds：
- DOI：10.1007/s10118-023-3042-z
  CLC：
- Received：03 May 2023，
  
  Revised：2023-7-14，
  
  Accepted：31 July 2023，
  
  Online First：15 September 2023，
  
  Published：01 January 2024
- Accepted：
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Liu, H. Y.; Han, L. H.; Kong, L. W.; Zhu, L. P.; Qiao, X. L.; Zhu, M. F. Poly(3-hexylthio) thiophene field-effect transistor device performance: impact of the content of hexylthio side chain on backbone. Chinese J. Polym. Sci. 2024, 42, 14–23

Hao-Yu Liu, Lian-He Han, Ling-Wei Kong, et al. Poly(3-hexylthio) thiophene Field-effect Transistor Device Performance: Impact of the Content of Hexylthio Side Chain on Backbone[J]. Chinese Journal of Polymer Science, 2024, 42(1): 14-23.
Liu, H. Y.; Han, L. H.; Kong, L. W.; Zhu, L. P.; Qiao, X. L.; Zhu, M. F. Poly(3-hexylthio) thiophene field-effect transistor device performance: impact of the content of hexylthio side chain on backbone. Chinese J. Polym. Sci. 2024, 42, 14–23 DOI： 10.1007/s10118-023-3042-z.

Hao-Yu Liu, Lian-He Han, Ling-Wei Kong, et al. Poly(3-hexylthio) thiophene Field-effect Transistor Device Performance: Impact of the Content of Hexylthio Side Chain on Backbone[J]. Chinese Journal of Polymer Science, 2024, 42(1): 14-23. DOI： 10.1007/s10118-023-3042-z.

摘要

Studying the effect of hexylthio chain content on poly (3-hexylthio)thiophene crystallization

aggregation

and optoelectronic performance of OFET devices by modulating the content of thiohexyl chains on the main chain.

Abstract

Regioregular poly(3-hexylthio)thiopene (

P3HTT

) has emerged tremendous potential in organic electronic applications due to the strong noncovalent interactions from the sulfur atom linked to thiophene. However

P3HTT

generally exhibits low charge mobility mostly due to poor solution processability attributed to dense arrangement of hexylthio side chain in polymer

which led to strong noncovalent interactions among sulfur atoms. To balance the nonvalent interaction and aggregation for

P3HTT

herein

we systematically study the effect of hexylthio side chain content in polymer backbone on the structure and properties. A series of regioregular

P3HTT

-based homopolymers (

P3HTT

P3HTT-50

P3HTT-33

and

P3HTT-25

) were prepared

via

Kumada catalyst transfer polycondensation method from a set of mono-

bi-

ter- and quarter- thiophenes containing different contents of hexylthio side chain. The DFT calculation shows the planarity of polymers backbone could be improved through reducing the density of hexylthio side chain in polymer mainchain. And significant changes in their crystallinity

aggregation and optical properties were observed with the content of hexylthio side chain reducing. The

P3HTT-33

displayed the highest field-effect transistor hole mobility of 2.83×10

−2

·V

−1

·s

−1

resulting from a balance between the crystallinity and planarity. This study demonstrates modulating the content of hexylthio side chain in

P3HTT

is an effective strategy to optimize the opto-electronic properties of polymer obtaining excellent semiconductor device performance.

关键词

Keywords

references

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