Poly(arylene ether nitrile) Dielectric Film Modified by Bi<sub>2</sub>S<sub>3</sub>/rGO-CN Fillers for High Temperature Resistant Electronics Fields

Li-Fen Tong; Liang He; Chen-Hao Zhan; Yun-Qing Xia; Xiao-Bo Liu

doi:10.1007/s10118-022-2810-5

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Poly(arylene ether nitrile) Dielectric Film Modified by Bi₂S₃/rGO-CN Fillers for High Temperature Resistant Electronics Fields

RESEARCH ARTICLE | Updated：2022-10-25

- Poly(arylene ether nitrile) Dielectric Film Modified by Bi₂S₃/rGO-CN Fillers for High Temperature Resistant Electronics Fields
- Chinese Journal of Polymer Science Vol. 40, Issue 11, Pages: 1441-1450(2022)
- Affiliations：
  
  a.School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
  b.Sichuan Province Engineering Technology Research Center of Novel CN Polymeric Materials, Chengdu 610054, China
- Author bio：
  
  tonglifen0214@uestc.edu.cn (L.F.T.)
  liuxb@uestc.edu.cn (X.B.L.)
- Funds：
- DOI：10.1007/s10118-022-2810-5
  CLC：
- Received：22 February 2022，
  
  Revised：2022-5-13，
  
  Accepted：19 May 2022，
  
  Online First：02 September 2022，
  
  Published：01 November 2022
- Accepted：
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Tong, L. F.; He, L.; Zhan, C. H.; Xia, Y. Q.; Liu, X. B. Poly(arylene ether nitrile) dielectric film modified by Bi₂S₃/rGO-CN fillers for high temperature resistant electronics fields. Chinese J. Polym. Sci. 2022, 40, 1441–1450 DOI: 10.1007/s10118-022-2810-5.

Li-Fen Tong, Liang He, Chen-Hao Zhan, et al. Poly(arylene ether nitrile) Dielectric Film Modified by Bi₂S₃/rGO-CN Fillers for High Temperature Resistant Electronics Fields[J]. Chinese Journal of Polymer Science, 2022, 40(11): 1441-1450. DOI: 10.1007/s10118-022-2810-5.
Tong, L. F.; He, L.; Zhan, C. H.; Xia, Y. Q.; Liu, X. B. Poly(arylene ether nitrile) dielectric film modified by Bi₂S₃/rGO-CN fillers for high temperature resistant electronics fields. Chinese J. Polym. Sci. 2022, 40, 1441–1450 DOI: 10.1007/s10118-022-2810-5. DOI：

Li-Fen Tong, Liang He, Chen-Hao Zhan, et al. Poly(arylene ether nitrile) Dielectric Film Modified by Bi₂S₃/rGO-CN Fillers for High Temperature Resistant Electronics Fields[J]. Chinese Journal of Polymer Science, 2022, 40(11): 1441-1450. DOI: 10.1007/s10118-022-2810-5. DOI：

摘要

The rod-shaped Bi

was grown

in situ

on the surface of rGO by hydrothermal method

and then cyanated. The above obtained fillers compounded with crosslinkable polyarylene ether nitrile to prepare a high temperature resistant dielectric film material with a

of 250 °C and dielectric constant of 6.8.

Abstract

High-quality film capacitors are widely used in many fields such as new energy vehicles

electronic communications

etc

due to their advantages in wide frequency response and low dielectric loss. The dielectric film is a crucial part of the film capacitor

and its properties have an important impact on the performance and use conditions of the film capacitor. In this work

a novel high-temperature-resistant dielectric film was prepared. Firstly

the Bi

/rGO-CN fillers were prepared by hydrothermal method combined with cyanation treatment

and then added to the poly(arylene ether nitrile) (PEN) matrix to prepare the dielectric film materials (PEN/Bi

/rGO-CN). After high temperature treatment

the fillers Bi

/rGO-CN reacted with the PEN matrix

and the composites materials transformed into a thermosetting hybrid film (PEN-Bi

/rGO) with gel content of 97.88%. The prepared hybrid dielectric films did not decompose significantly before 400 °C

and showed a glass transition temperature (

) of up to 252.4 °C

which could increase the effective use temperature of the materials. Compared with the composite films without heat treatment

they exhibit better mechanical properties

with further improvement in tensile strength and elastic modulus

and a decrease in elongation at break. The dielectric constant of the hybrid films can be up to 6.8 while the dielectric loss is only about 0.02 at 1 kHz. Moreover

the hybrid films showed excellent dielectric stability during temperature changes

and remain relatively stable before 250 °C

which is suitable as a high-temperature-resistant high-dielectric material and is more advantageous for practical applications.

关键词

Keywords

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Poly(arylene ether nitrile) Dielectric Film Modified by Bi2S3/rGO-CN Fillers for High Temperature Resistant Electronics Fields

DOI：10.1007/s10118-022-2810-5

摘要

Abstract

关键词

Keywords

references

Poly(arylene ether nitrile) Dielectric Film Modified by Bi₂S₃/rGO-CN Fillers for High Temperature Resistant Electronics Fields