

FOLLOWUS
a.State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
b.State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
jdzhang@ciac.ac.cn (J.D.Z.)
zmf@dhu.edu.cn (M.F.Z.)
Received:03 February 2021,
Revised:2021-3-2,
Accepted:09 March 2021,
Online First:24 May 2021,
Published:14 May 2021
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Qiao, X. L.; Yang, J.; Han, L. H.; Zhang, J. D.; Zhu, M. F. Synergistic effects of solvent vapor assisted spin-coating and thermal annealing on enhancing the carrier mobility of poly(3-hexylthiophene) field-effect transistors. Chinese J. Polym. Sci. 2021, 39, 849–855
Xiao-Lan Qiao, Jie Yang, Lian-He Han, et al. Synergistic Effects of Solvent Vapor Assisted Spin-coating and Thermal Annealing on Enhancing the Carrier Mobility of Poly(3-hexylthiophene) Field-effect Transistors[J]. Chinese Journal of Polymer Science, 2021, 39(7): 849-855.
Qiao, X. L.; Yang, J.; Han, L. H.; Zhang, J. D.; Zhu, M. F. Synergistic effects of solvent vapor assisted spin-coating and thermal annealing on enhancing the carrier mobility of poly(3-hexylthiophene) field-effect transistors. Chinese J. Polym. Sci. 2021, 39, 849–855 DOI: 10.1007/s10118-021-2577-0.
Xiao-Lan Qiao, Jie Yang, Lian-He Han, et al. Synergistic Effects of Solvent Vapor Assisted Spin-coating and Thermal Annealing on Enhancing the Carrier Mobility of Poly(3-hexylthiophene) Field-effect Transistors[J]. Chinese Journal of Polymer Science, 2021, 39(7): 849-855. DOI: 10.1007/s10118-021-2577-0.
Poly(3-hexylthiophene) (P3HT) thin films
obtained by normal spin-coating and solvent vapor assisted spin-coating (SVASP) before and after thermal annealing (TA)
and the corresponding devices were prepared to unravel the microstructure-property relationship
which is of great importance for the development of organic electronics. When SVASP-TA films were used as the active layers of the organic field-effect transistors
a hole mobility up to 0.38 cm
2
·V
–1
·s
–1
was achieved. This mobility was one of the highest values and one order of magnitude higher than that of the normal spin-coating films based transistors. The relationship between the microstructure and the device performance was fully investigated by UV-Vis absorption spectra
grazing incident X-ray diffraction (GIXD)
and atomic force microscopy (AFM). The impressive mobility was attributed to the high crystallinity and ordered molecule packing
which stem from the synergistic effects of SVASP and thermal annealing.
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