A Facile Strategy for Non-fluorinated Intrinsic Low-<italic style="font-style: italic">k</italic> and Low-loss Dielectric Polymers: Valid Exploitation of Secondary Relaxation Behaviors

Chao Qian; Zhen-Guo Fan; Wei-Wen Zheng; Run-Xin Bei; Tian-Wen Zhu; Si-Wei Liu; Zhen-Guo Chi; Matthew P. Aldred; Xu-Dong Chen; Yi Zhang; Jia-Rui Xu

doi:10.1007/s10118-020-2339-4

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A Facile Strategy for Non-fluorinated Intrinsic Low-k and Low-loss Dielectric Polymers: Valid Exploitation of Secondary Relaxation Behaviors

ARTICLE | Updated：2019-10-22

- A Facile Strategy for Non-fluorinated Intrinsic Low-k and Low-loss Dielectric Polymers: Valid Exploitation of Secondary Relaxation Behaviors
- Chinese Journal of Polymer Science Vol. 38, Issue 3, Pages: 213-219(2020)
- Affiliations：
  
  PCFM Lab, GD HPPC Lab, Guangdong Engineering Technology Research Centre for High-performance Organic and Polymer Photoelectric Functional Films, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry, Sun Yat-sen University, Guangzhou 510275, China
- Author bio：
  
  ceszy@mail.sysu.edu.cn
- Funds：
- DOI：10.1007/s10118-020-2339-4
  CLC：
- Received：14 June 2019，
  
  Revised：2019-7-27，
  
  Accepted：07 August 2019，
  
  Online First：22 October 2019，
  
  Published：2020-03
- Accepted：
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Qian, C.; Fan, Z. G.; Zheng, W. W.; Bei, R. X.; Zhu, T. W.; Liu, S. W.; Chi, Z. G.; Aldred, M. P.; Chen, X. D.; Zhang, Y.; Xu, J. R. A facile strategy for non-fluorinated intrinsic low-k and low-loss dielectric polymers: valid exploitation of secondary relaxation behaviors. Chinese J. Polym. Sci. 2020, 38, 213–219.

Chao Qian, Zhen-Guo Fan, Wei-Wen Zheng, et al. A Facile Strategy for Non-fluorinated Intrinsic Low-k and Low-loss Dielectric Polymers: Valid Exploitation of Secondary Relaxation Behaviors[J]. Chinese Journal of Polymer Science, 2020, 38(3): 213-219. DOI: 10.1007/s10118-020-2339-4.
Qian, C.; Fan, Z. G.; Zheng, W. W.; Bei, R. X.; Zhu, T. W.; Liu, S. W.; Chi, Z. G.; Aldred, M. P.; Chen, X. D.; Zhang, Y.; Xu, J. R. A facile strategy for non-fluorinated intrinsic low-k and low-loss dielectric polymers: valid exploitation of secondary relaxation behaviors. Chinese J. Polym. Sci. 2020, 38, 213–219. DOI： 10.1007/s10118-020-2339-4.

Chao Qian, Zhen-Guo Fan, Wei-Wen Zheng, et al. A Facile Strategy for Non-fluorinated Intrinsic Low-k and Low-loss Dielectric Polymers: Valid Exploitation of Secondary Relaxation Behaviors[J]. Chinese Journal of Polymer Science, 2020, 38(3): 213-219. DOI: 10.1007/s10118-020-2339-4. DOI：

摘要

Abstract

High-performance low-

and low-loss circuit materials are urgently needed in the field of microelectronics due to the upcoming Fifth-Generation Mobile Communications Technology (5G Technology). Herein

a facile design strategy for non-fluorinated intrinsic low-

and low-loss polyimides is reported by fully considering the secondary relaxation behaviors of the polymer chains. A new amorphous non-fluorinated polymer (TmBPPA) with a

value of 2.23 and a loss tangent lower than 3.94 × 10

−3

at 10

Hz has been designed and synthesized

which to the best of our knowledge is the lowest value amongst the non-fluorinated and non-porous polymers reported in literature. Meanwhile

TmBPPA exhibits excellent overall properties

such as excellent thermostability

good mechanical properties

low moisture absorption

and high bonding strength. As high-performance flexible circuit materials

all these characteristics are highly expected to meet the present and future demands for high density

high speed

and high frequency electronic circuit used in 5G wireless networks.

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references

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A Facile Strategy for Non-fluorinated Intrinsic Low-k and Low-loss Dielectric Polymers: Valid Exploitation of Secondary Relaxation Behaviors

DOI：10.1007/s10118-020-2339-4

摘要

Abstract

关键词

Keywords

references