Fluorinated <italic style="font-style: italic">p</italic>-<italic style="font-style: italic">n</italic> Type Copolyfluorene as Polymer Electret for Stable Nonvolatile Organic Transistor Memory Device

Liu Bin; Bao Yan; Ling Hai-feng; Zhu Wen-sai; Gong Rui-jun; Lin Jin-yi; Xie Ling-hai; Yi Ming-dong; Huang Wei

doi:10.1007/s10118-016-1826-0

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Fluorinated p-n Type Copolyfluorene as Polymer Electret for Stable Nonvolatile Organic Transistor Memory Device

PAPERS | Updated：2021-05-12

- Fluorinated p-n Type Copolyfluorene as Polymer Electret for Stable Nonvolatile Organic Transistor Memory Device
- Chinese Journal of Polymer Science Vol. 34, Issue 10, Pages: 1183-1195(2016)
- Affiliations：
  
  a Centre for Molecular Systems and Organic Devices, Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
  b Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
- Author bio：
  
  Ling-hai Xie (解令海), E-mail: iamlhxie@njupt.edu.cn
  Ming-dong Yi (仪明东), E-mail: iammdyi@njupt.edu.cn
  Wei Huang (黄维), E-mail: iamwhuang@njupt.edu.cn
- Funds：
- DOI：10.1007/s10118-016-1826-0
  CLC：
- Received：21 March 2016，
  
  Revised：2016-4-28，
  
  Accepted：01 May 2016，
  
  Published：05 October 2016
- Accepted：
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Liu Bin, Bao Yan, Ling Hai-feng, et al. Fluorinated p-n Type Copolyfluorene as Polymer Electret for Stable Nonvolatile Organic Transistor Memory Device[J]. Chinese Journal of Polymer Science, 2016, 34(10): 1183-1195. DOI: 10.1007/s10118-016-1826-0.
DOI：

Liu Bin, Bao Yan, Ling Hai-feng, et al. Fluorinated p-n Type Copolyfluorene as Polymer Electret for Stable Nonvolatile Organic Transistor Memory Device[J]. Chinese Journal of Polymer Science, 2016, 34(10): 1183-1195. DOI: 10.1007/s10118-016-1826-0. DOI：

摘要

Abstract

In this study

a kind of fluorinated copolyfluorene

named poly[(4-(octyloxy)-9

9-diphenylfluorene-2

7-diyl)-

alt

-(2

6-tetrafluoro-1

4-phenylene)] (PODPF-TFP)

is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart

poly[(4-(octyloxy)-9

9-diphenylfluorene-2

7-diyl)-

alt

-phenylene)] (PODPF-P)

deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally

organic field-effect transistor (OFET) memory devices are fabricated with PODPF-P/PODPF-TFP as the dielectric layers

and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom

the device based on PODPF-TFP exhibits larger memory window and more stable I

off

ratio during a retention time of 10

s as well as a better aging stability. The present study suggests that fluorinated

p-n

copolyfluorene electrets could enhance the capabilities of charge trapping and storage

which are promising for OFET memory devices.

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⁰

Fluorinated p-n Type Copolyfluorene as Polymer Electret for Stable Nonvolatile Organic Transistor Memory Device

DOI：10.1007/s10118-016-1826-0

摘要

Abstract

关键词

Keywords

references