DOPING LEVEL INCREASE OF POLY(3-METHYLTHIOPHENE)FILM DURING ELECTROCHEMICAL POLYMERIZATION PROCESS*

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DOPING LEVEL INCREASE OF POLY(3-METHYLTHIOPHENE)FILM DURING ELECTROCHEMICAL POLYMERIZATION PROCESS*

Papers | Updated：2021-06-21

- DOPING LEVEL INCREASE OF POLY(3-METHYLTHIOPHENE)FILM DURING ELECTROCHEMICAL POLYMERIZATION PROCESS*
- Vol. 20, Issue 5, Pages: 425-430(2002)
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- Published：20 October 2002
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DOPING LEVEL INCREASE OF POLY(3-METHYLTHIOPHENE)FILM DURING ELECTROCHEMICAL POLYMERIZATION PROCESS*[J]. 2002, 20(5): 425-430.
DOI：

DOPING LEVEL INCREASE OF POLY(3-METHYLTHIOPHENE)FILM DURING ELECTROCHEMICAL POLYMERIZATION PROCESS*[J]. 2002, 20(5): 425-430. DOI：

摘要

The Raman spectra of poly(3-methylthiophene) (PMeT) films with different thicknesses

which have beenelectrochemically deposited on a flat stainless steel electrode surface by direct oxidation of 3-methylthiophene in borontrifluoride diethyl etherate (BFEE) at a constant applied potential of 1.38 V (versus SCE)

have been investigated byexcitation with a 633-nm laser beam. The spectroscopic results demonstrated that the doping level of PMeT film was increasing during film growth. This finding was also confirmed by electrochemical examination.Moreover

the Raman bands assigned to radical cations and dications in deped PMeT films were found approximately at 1420 and 1400 cm-1

respectively.Radical cations and dications coexist on the backbone of PMeT as conductive species and their concentrations increase with the increase of doping level.Successive cyclic voltammetry was proved to be an effective approach to improving the doping level of as-grown thin compact PMeT film.

Abstract

The Raman spectra of poly(3-methylthiophene) (PMeT) films with different thicknesses

the Raman bands assigned to radical cations and dications in deped PMeT films were found approximately at 1420 and 1400 cm-1

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