RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION*

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RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION*

Papers | Updated：2021-06-21

- RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION*
- Vol. 17, Issue 1, Pages: 49-55(1999)
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- Published：20 February 1999
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RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION*[J]. 1999, 17(1): 49-55.
DOI：

RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION*[J]. 1999, 17(1): 49-55. DOI：

摘要

Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS)

Al/PS-PANI/Au cell

were fabricated

and the rectifying parameters of this heterojunction diode were measured as a function of thepreparation conditions of PANI and PS

the electronic structure of PANI as well as cell structure. Therectifying parameters of Al/PS-PANI/Au cell were determined to be γ= 1 .8×101～ 1 .0×105 for the rectifyingratio at 3V

n = 3 ～12 for the ideal factor

j0 = 8.0×10-5～5.6×10-2 mA/cm2 for the reversed saturated current density

and φb=0.67～0.83 V for the barrier height

respectively.The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (γ=1.0×105 at 3V )

output current(>1500mA/cm2 at 3V ) and lower ideal factor(n=3.3)was obtained by preventing the oxidation of PS before evaporating Al electrode.

Abstract

Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS)

Al/PS-PANI/Au cell

were fabricated

and the rectifying parameters of this heterojunction diode were measured as a function of thepreparation conditions of PANI and PS

the electronic structure of PANI as well as cell structure. Therectifying parameters of Al/PS-PANI/Au cell were determined to be γ= 1 .8×101～ 1 .0×105 for the rectifyingratio at 3V

n = 3 ～12 for the ideal factor

j0 = 8.0×10-5～5.6×10-2 mA/cm2 for the reversed saturated current density

and φb=0.67～0.83 V for the barrier height

respectively.The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (γ=1.0×105 at 3V )

output current(>1500mA/cm2 at 3V ) and lower ideal factor(n=3.3)was obtained by preventing the oxidation of PS before evaporating Al electrode.

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