Topological Design of Low Dielectric Ladder-like Polysilsesquioxane and Copolymers

Wen-Jie Fan; Meng Xie; Jin-Feng Tian; Yan He; Shuang Xia; Wen-Xin Fu

doi:10.1007/s10118-025-3296-8

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Topological Design of Low Dielectric Ladder-like Polysilsesquioxane and Copolymers

RESEARCH ARTICLE | Updated：2025-02-25

- Topological Design of Low Dielectric Ladder-like Polysilsesquioxane and Copolymers
- Chinese Journal of Polymer Science Vol. 43, Issue 3, Pages: 477-487(2025)
- Affiliations：
  
  a.Key Laboratory of Science and Technology on High-Tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
  b.University of Chinese Academy of Sciences, Beijing 100049, China
  c.State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu 610065, China
- Author bio：
  
  xiashuang@scu.edu.cn (S.X.)
  fuwenxin@iccas.ac.cn (W.X.F.)
- Funds：
- DOI：10.1007/s10118-025-3296-8
  CLC：
- Received：05 December 2024，
  
  Revised：2025-01-01，
  
  Accepted：11 January 2025，
  
  Online First：13 February 2025，
  
  Published：01 March 2025
- Accepted：
Scan QR Code
Fan, W. J.; Xie, M.; Tian, J. F.; He, Y.; Xia, S.; Fu, W. X. Topological design of low dielectric ladder-like polysilsesquioxane and copolymers. Chinese J. Polym. Sci. 2025, 43, 477–487

Wen-Jie Fan, Meng Xie, Jin-Feng Tian, et al. Topological Design of Low Dielectric Ladder-like Polysilsesquioxane and Copolymers[J]. Chinese Journal of Polymer Science, 2025, 43(3): 477-487.
Fan, W. J.; Xie, M.; Tian, J. F.; He, Y.; Xia, S.; Fu, W. X. Topological design of low dielectric ladder-like polysilsesquioxane and copolymers. Chinese J. Polym. Sci. 2025, 43, 477–487 DOI： 10.1007/s10118-025-3296-8.

Wen-Jie Fan, Meng Xie, Jin-Feng Tian, et al. Topological Design of Low Dielectric Ladder-like Polysilsesquioxane and Copolymers[J]. Chinese Journal of Polymer Science, 2025, 43(3): 477-487. DOI： 10.1007/s10118-025-3296-8.

摘要

We present a topological design approach for ladder-like polysilsesquioxanes and copolymers. The cured materials exhibit excellent dielectric properties (

3.0

−2

)

superior thermal stability (

453 °C)

reduced water absorption (from 0.33 wt% to 0.06 wt%) and enhanced mechanical properties.

Abstract

Low dielectric constant (low-

) materials are critical for advanced packaging in high-density microelectronic devices and high-frequency communication technologies. Ladder polysiloxanes

which are characterized by their unique double-chain structure and intrinsic microporosity

offer remarkable advantages in terms of thermal stability

oxidation resistance

and dielectric performance. However

structural defects in ladder polysiloxanes

such as cage-like and irregular oligomers

and their effects on dielectric properties remain underexplored. In this study

a series of ladder-like polysiloxanes (

X-TMS

) with diverse side groups weresynthesized

via

a one-step base-catalyzed method. The influence of the benzocyclobutene (BCB) side groups on the formation of regular ladder structures was systematically investigated. Notably

BCB incorporation disrupted the structural regularity

favoring the formation of cage-like and irregular topologies

which were extensively characterized using

silicon nuclear magnetic resonance spectroscopy (

Si-NMR)

Fourier transform infrared spectroscopy (FTIR)

gel permeation chromatography (GPC)

and X-ray diffraction (XRD). These structural defects were beneficial for improving the hydrophobicity and thermal stability. Copolymerization of X-TMS with commercial DVS-BCB resins further enhanced the mechanical properties

with the elastic modulus increasing from 3.6 GPa to 4.4 GPa and water absorption reduced from 0.33 wt% to 0.06 wt%. This study establishes a clear correlation between topological structures and material properties. These findings not only advance the un

derstanding of the structure-property relationships in ladder polysiloxanes but also provide a novel approach for designing high-performance interlayer dielectric materials for next-generation microelectronics.

关键词

Keywords

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