

FOLLOWUS
a.National Engineering Research Center of Novel Equipment for Polymer Processing, Key Laboratory of Polymer Processing Engineering of Ministry of Education, Guangdong Provincial Key Laboratory of Technique and Equipment for Macromolecular Advanced Manufacturing, School of Mechanical and Automotive Engineering, South China University of Technology, Guangzhou 510640, China
b.Engineering Center for Superlubricity, Jihua Laboratory, Foshan 528200, China
c.Guangdong Provincial Key Laboratory of Distributed Energy Systems, Guangdong Provincial Engineering Research Center of Distributed Energy Systems, Dongguan University of Technology, Dongguan 523808, China
ppeme@scut.edu.cn (X.W.C.)
scutw.wei@gmail.com (W.W.)
Received:17 April 2024,
Revised:2024-05-13,
Accepted:06 June 2024,
Online First:18 September 2024,
Published:30 November 2024
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Zhao, W. J.; Tong, Y. Z.; Zeng, P. P.; Zhou, Y. S.; Cao, X. W.; Wu, W. Comparative study of intrachain versus interchain cross-linking on the mechanical, thermal and dielectric properties of low-k polyimide. Chinese J. Polym. Sci. 2024, 42, 1824–1834
Wan-Jing Zhao, Yi-Zhang Tong, Pei-Pei Zeng, et al. Comparative Study of Intrachain versus Interchain Cross-linking on the Mechanical, Thermal and Dielectric Properties of Low-
Zhao, W. J.; Tong, Y. Z.; Zeng, P. P.; Zhou, Y. S.; Cao, X. W.; Wu, W. Comparative study of intrachain versus interchain cross-linking on the mechanical, thermal and dielectric properties of low-k polyimide. Chinese J. Polym. Sci. 2024, 42, 1824–1834 DOI: 10.1007/s10118-024-3186-5.
Wan-Jing Zhao, Yi-Zhang Tong, Pei-Pei Zeng, et al. Comparative Study of Intrachain versus Interchain Cross-linking on the Mechanical, Thermal and Dielectric Properties of Low-
Comparative analysis of the influence of intrachain and interchain cross-linking structures on the dielectric of PI. Remarkably
PI films with an intrachain cross-linking structure exhibit a lower dielectric constant and dielectric loss compared to PI films with an interchain cross-linking structure.
Polyimide (PI) is widely used in high-frequency communication technology due to its exceptional comprehensive properties. However
traditional PI has a relatively elevated dielectric constant and dielectric loss. Herein
the different cross-linked structures were introduced in PI matrix and conducted a detailed discussion on the influence of cross-linking agent content and cross-linking structure type on the overall performance of PI films. In comparison to the dielectric constant of 2.9 of neat PI
PI with an interchain cross-linking structure containing 2 wt% 1
3
5-tris(4-aminophenyl)benzene (TAPB) (interchain-PI-2) exhibited the reduced dielectric constant of 2.55 at 1 MHz. The PI films with intrachain cross-linking structure containing 2 wt% TAPB (intrachain-PI-2) exhibited the lowest dielectric constant of 2.35 and the minimum dielectric loss of 0.0075 at 1 MHz. It was due to the more entanglement junctions of intrachain-PI resulting in decreased carrier transport. The thermal expansion coefficients of both interchain-PI and intrachain-PI films were effectively reduced. Moreover
in contrast to interchain-PI films
the intrachain-PI films maintained colorlessness and transparency as the cross-linking agent content increased. This work compared the effects of two different cross-linked structures on the performance of PI films and provided a feasible way to obtain low-
k
PI films with excellent comprehensive performance for 5G applications.
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