

FOLLOWUS
a.School of Textile Materials and Engineering, Wuyi University, Jiangmen 529020, China
b.Department of Chemistry and the Tsinghua Center for Frontier Polymer Research, Tsinghua University, Beijing 100084, China
wyc@wyu.edu.cn (Y.C.W.)
machunpingaa@126.com (C.P.M.)
weiyen@mail.tsinghua.edu.cn (Y.W.)
Received:08 May 2023,
Revised:2023-6-1,
Accepted:04 June 2023,
Online First:24 July 2023,
Published:01 October 2023
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Wu, Y. C.; Huang, G. T.; Lian, M. Y.; Liang, R.; Deng, H. L.; Gan, F.; Zhang, Y. F.; Yi, N. B.; Tian, L. Y.; Ma, C. P.; Wei, Y. Modified triphenylmethane-based polyimides with improved optical, dielectric and solubility properties via post-polymerization modification. Chinese J. Polym. Sci. 2023, 41, 1609–1616
Yan-Cheng Wu, Guo-Tao Huang, Man-Yu Lian, et al. Modified Triphenylmethane-based Polyimides with Improved Optical, Dielectric and Solubility Properties
Wu, Y. C.; Huang, G. T.; Lian, M. Y.; Liang, R.; Deng, H. L.; Gan, F.; Zhang, Y. F.; Yi, N. B.; Tian, L. Y.; Ma, C. P.; Wei, Y. Modified triphenylmethane-based polyimides with improved optical, dielectric and solubility properties via post-polymerization modification. Chinese J. Polym. Sci. 2023, 41, 1609–1616 DOI: 10.1007/s10118-023-3018-z.
Yan-Cheng Wu, Guo-Tao Huang, Man-Yu Lian, et al. Modified Triphenylmethane-based Polyimides with Improved Optical, Dielectric and Solubility Properties
A post-polymerization modification is developed to prepare a new family of bulky tert-butyldimethylsiloxy modified polyimide films with significantly improved optical
dielectric and solubility properties.
A family of new triphenylmethane (TPM)-based polyimides (PIs) containing bulky
tert
-butyldimethylsiloxy (TBS) side-groups (PI-TPMOSis) has been prepared by a post-polymerization modification
via
a simple silyl ether reaction of TPM-based PIs containing hydroxyl (OH) groups (PI-TPMOHs). The attachment of TBS side-groups in PI-TPMOSis can be achieved up to 100%
as confirmed by the
1
H-NMR and IR spectra. Due to the presence of the TPM structure
PI-TPMOSi films still display the excellent thermal stability with high glass transition temperature (
T
g
) of 314−351 °C and high degradation temperature (
T
d5%
) of 480−501 °C. It is quite remarkable that the introduction of TBS side-groups into PI-TPMOSi chains results in more superior optical
dielectric and solubility properties in comparison with the precursor PI-TPMOH films
probably due to the reductions of the packing density and charge-transfer complexes (CTCs) formation. The optical transmittance at 400 nm (
T
400
) of PI-TPMOSi films is significantly increased from 45.3%−68.8% to 75.4%−81.6% of the precursor PI-TPMOH films. The dielectric constant (
D
k
) and dissipation factor (
D
f
) at 1 MHz of PI-TPMOSi films are reduced from 4.11−4.40 and 0.00159−0.00235 to 2.61−2.92 and 0.00125−0.00171 of the precursor PI-TPMOH films
respectively. Combining the molecular design and simple preparation method
this study provides an effective approach for enhancement of various properties of PI films for microelectronic and photoelectric engineering applications.
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