Infrared Photodetectors and Image Arrays Made with Organic Semiconductors
RESEARCH ARTICLE|Updated:2023-09-21
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Infrared Photodetectors and Image Arrays Made with Organic Semiconductors
Chinese Journal of Polymer ScienceVol. 41, Issue 10, Pages: 1629-1637(2023)
Affiliations:
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Zhong, Z. M.; Peng, F.; Ying, L.; Huang, Z. Q.; Zhong, W. K.; Yu, G.; Cao, Y.; Huang, F. Infrared photodetectors and image arrays made with organic semiconductors. Chinese J. Polym. Sci. 2023, 41, 1629–1637
Zhi-Ming Zhong, Feng Peng, Lei Ying, et al. Infrared Photodetectors and Image Arrays Made with Organic Semiconductors[J]. Chinese Journal of Polymer Science, 2023, 41(10): 1629-1637.
Zhong, Z. M.; Peng, F.; Ying, L.; Huang, Z. Q.; Zhong, W. K.; Yu, G.; Cao, Y.; Huang, F. Infrared photodetectors and image arrays made with organic semiconductors. Chinese J. Polym. Sci. 2023, 41, 1629–1637DOI: 10.1007/s10118-023-2973-8.
Zhi-Ming Zhong, Feng Peng, Lei Ying, et al. Infrared Photodetectors and Image Arrays Made with Organic Semiconductors[J]. Chinese Journal of Polymer Science, 2023, 41(10): 1629-1637.DOI: 10.1007/s10118-023-2973-8.
Infrared Photodetectors and Image Arrays Made with Organic Semiconductors
Thin film photodiode based on narrow-bandgap polymer PPCPD achieved high detectivity and quantum efficiency and realized high pixel-density image arrays without pixel-level-patterning. Short-wavelength infrared imaging could be scanned and read out by a 1 × 256 linear array with 25 μm × 25 μm pixel pitch.
Abstract
Combining the strategies of introducing larger heteroatom
regio-regular backbone and extended branching position of side-chain
we developed polymer semiconductors (
PPCPD
) with narrow band-gap to construct the photosensing layer of thin-film photodiodes and image arrays. The spectral response of the resulting organic photodiodes spans from the near ultra-violet to short-wavelength infrared region. The performance of these short-wavelength infrared photodiodes in 900–1200 nm range achieved a level competitive with that of indium gallium arsenide-based inorganic crystalline detectors
exhibiting a specific detectivity of 5.55×10
12
Jones at 1.15 μm. High photodetectivity and quantum efficiency in photodiode with amorphous/nanocrystalline thin-films of 100−200 nm thickness enabled high pixel-density image arrays without pixel-level-patterning in the sensing layer. 1 × 256 linear diode arrays with 25 μm × 25 μm pixel pitch were achieved
enabling high pixel-density short-wavelength infrared imaging at room temperature.
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